Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1998-08-12
2000-03-21
Meeks, Timothy
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
427255394, 4272557, C23C 1634
Patent
active
060400129
ABSTRACT:
The invention relates to a process for the preparation of a multilayer coating, comprising a stack, on a substrate, of several layers chosen from among layers constituting by TiN and layers constituted by (Ti,Al)N, also known as Ti.sub.1-x Al.sub.x N, the entire coating being produced in a single, continuous operation by thermal chemical vapour deposition (CVD) from a gaseous mixture comprising a reducing gas, such as ammonia or nitrogen, hydrogen and titanium and optionally aluminium chlorides, the nature and/or composition of each deposited layer being instantaneously adjusted by modifying the reducing gas to hydrogen molar ratio in the gaseous mixture. The invention also relates to multilayer coatings comprising (Ti,Al)N layers of variable compositions and in particular with composition gradient. Application to wear-resistant or abrasion-proof coatings having a resistance to oxidation and corrosion, particularly at high temperatures.
REFERENCES:
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patent: 5679448 (1997-10-01), Kawata
Sang-Hyeob Lee, et al., J. Vac. Sci. Technology, vol. 13, No. 4, pp. 2030-2034, "Compositionally Gradient (TI.sub.1-x AL.sub.x)N Coatings Made by Plasma Enhanced Chemical Vapor Deposition", Jul./Aug. 1995.
C. Jimenez, et al., Surface and Coatings Technology, vol. 76-77, pp. 237-243, "Deposition of TiN Thin Films by Organometallic Chemical Vapor Deposition: Thermodynamical Predictions and Experimental Results", 1995 (no month).
Sang-Hyeob Lee, et al., J. Vac. Sci. Technology, vol. A12, No. 4, pp. 1602-1607, "(Ti.sub.1-X Al.sub.x)N Coatings by Plasma-Enhanced Chemical Vapor Deposition", Jul./Aug. 1994.
Kwang Ho Kim, et al., Thin Solid Films, vol. 283, pp. 165-170, "Comparative Studies of TiN and Ti.sub.1-x A1.sub.X N by Plasma-Assisted Chemical Vapor Deposition using a TiC1.sub.4 /A1C1.sub.3 /N.sub.2 /H.sub.2 /Ar GAS Mixture", 1996, (no month).
S. Gilles, et al., ICMCTF Conference, pp. 1-18, "Deposition of (Ti, Al)N Thin Films by Organometallic Chemical Vapor Deposition: Thermodynamic Predictions and Experimental Results", May 1997.
N. Thomas, et al., Journal of the Electrochemical Society, vol. 140, No. 2, pp. 475-484, "LPCVD WSi.sub.2 Films using Tungsten Chlorides and Silane", Feb. 1993.
Anderbouhr Stephanie
Blanquet Elisabeth
Schuster Frederic
Theret Gerald
Commissariat a l''Energie Atomique
Meeks Timothy
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