Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1981-12-14
1984-01-31
Ozaki, G.
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
148173, 148187, 29572, 29576E, 156617SP, H01L 21208
Patent
active
044287836
ABSTRACT:
The invention makes it possible to manufacture silicon wafers having vertical p-n junctions as the basic material for solar cells. As a result of simultaneously adding certain dopants that act in the silicon crystal as donors and certain dopants that develop acceptor properties and also as a result of measures that result in a periodic change in the crystal growth from a low rate v.sub.n to a high rate v.sub.n, p- and n-conductive zones are produced in the silicon, each having a total length of from 5 to 2000 .mu.m.
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Collard Allison C.
Galgano Thomas M.
Heliotronic Forschungs-und Entwicklungsgesellschaft fur
Ozaki G.
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