Process for the manufacture of silicon dioxide

Details Process for the manufacture of silicon dioxide Process for the manufacture of silicon dioxide

1977-04-25

1978-08-22

Vertiz, O. R.

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

23262, 23277R, 423337, C01B 3312

Patent

active

041089642

ABSTRACT:
A process and device for the manufacture of highly disperse silicon dioxide by reacting gaseous organosilanes and other gases that burn with formation of water with oxygen-containing gases in a flame which comprises evaporating the organosilane in an evaporator in such a manner that the level of liquid organosilane is held constant at an organosilane evaporatinng vapor pressure of 0.2 to 1.2 atmospheres gage and, at most, at a temperature of 45.degree. C, preferably 20.degree. to 35.degree. C, above the boiling point of the particular organosilane, maintaining the temperature of the vapor until mixing with the other gases occurs, metering the gas mixture resulting from the mixing through a cone-shaped inlet into a combustion chamber, flushing oxygen-containing gases through an annular nozzle surrounding the inlet into the combustion chamber, and indirectly but positively, cooling the latter.

REFERENCES:
patent: 3560151 (1971-02-01), Vogt et al.
patent: 3661519 (1972-05-01), Driscoll
patent: 3772427 (1973-11-01), Moore
patent: 3954945 (1976-05-01), Lange et al.

Affiliated with

Also associated with

Rating

Process for the manufacture of silicon dioxide does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for the manufacture of silicon dioxide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for the manufacture of silicon dioxide will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1558398