Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1999-04-27
2000-09-05
Beck, Shrive
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
427255394, C23C 1608
Patent
active
061139858
ABSTRACT:
Using a GaN growth furnace, at least three different techniques can be used for forming the targets for the deposition of thin films. In the first, nitrides can be deposited as a dense coating on a target backing plate for use as a target. In this approach, the backing plate is placed near the Group III metal. During processing, the Group III metal or metal halide vaporizes and reacts with the nitrogen source to deposit a dense polycrystalline layer on the backing plate. To build up a thick layer on the backing plate, the backing plate is repeatedly placed in the processing furnace until a satisfactory thickness is attained. For the second approach, a properly shaped reaction vessel, the dense, thick Group III nitride crust that forms on top of the Group III metal during the process can be used directly or mechanically altered to meet the size requirements for a sputtering target holder. As a third approach, the Group III nitride material can be ground into a fine powder using traditional ceramic powder processing methods and then pressed to consolidate the powder into a sputtering target. The third processing option would typically lead to a low density target; however, this "green" compact can then be reinserted into the same processing apparatus that the original powder was synthesized to infiltrate the open pores with the same or another group III metal nitride. This would produce a high density, thick target.
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Bailey John S.
Bliss David F.
Callahan Michael
Harris Meckie T.
Suscavage Michael J.
Beck Shrive
Collier Stanton E.
Strain Paul D.
The United States of America as represented by Secretary of the
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