Process for the manufacture of a self-aligned thin-film transist

Details Process for the manufacture of a self-aligned thin-film transist Process for the manufacture of a self-aligned thin-film transist

1984-10-10

1986-05-13

Roy, Upendra

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29576B, 29576J, 148 15, 148175, 148187, 148DIG91, H01L 21324, H01L 21265

Patent

active

045877203

ABSTRACT:
The process consists in producing the grid (4) of the transistor on a glass substrate (2), depositing an insulating layer (6) on the substrate and grid, depositing a thick layer (8) of hydrogenated amorphous silicon on the insulating layer, depositing on the silicon layer a layer (10) of positive photosensitive resin sensitive to light of a wavelength greater than 550 nm, irradiating the resin layer through the substrate, the grid serving as a mask for the irradiation, developing the resin, etching the silicon layer until the insulating layer is bared, the remanent resin serving as a mask for the etching, depositing the layers permitting the making of the electrical contacts and the electrodes of the source and of the drain, eliminating the remanent resin (10a), and etching the electrodes of the source and of the drain.

REFERENCES:
patent: 4380864 (1983-04-01), Das
patent: 4398343 (1983-08-01), Yamazaki
patent: 4456490 (1984-06-01), Dutta et al.
IEEE Electron Device Letters, vol. EDL-3, No. 7, juillet 1982, New York (US).
T. Kodama et al: "Self-Alignment Process for Amorphous Silicon Thin Film Transistors", pp. 187-189 *pp. 187, 188, Alinea 2; FIG. 1*.
Sid International Symposium-Digest of Technical Papers, Edition 1, avril 1980, Lewis Winner, Coral Gables, Florida, (US).
E. Lueder: "Processing of Thin Film Transistors With Photolithography and Application for Displays", pp. 118, 119.

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