Process for the laminar joining of silicon semiconductor slices

Details Process for the laminar joining of silicon semiconductor slices Process for the laminar joining of silicon semiconductor slices

1994-02-04

1997-12-02

Trinh, Michael

Fishing, trapping, and vermin destroying

437927, 437974, 148DIG12, 148DIG58, H01L 21603

Patent

active

056935749

ABSTRACT:
A process for the laminar joining of two or more silicon semiconductor slices (wafers) under the effect of pressure and heat, in which a thin layer of a semiconductor-compatible material is applied to at least one of the surfaces to be joined.

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Ghandhi, "VLSI Fabrication Principles", 1983, pp. 420-421, 432-433.

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