Process for the heat flash vapour phase deposition of an insulat

Details Process for the heat flash vapour phase deposition of an insulat Process for the heat flash vapour phase deposition of an insulat

1988-08-19

1990-04-03

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 41, 437184, 437238, 437241, 437173, 427 55, 4272552, 4272553, H01L 21316, H01L 21318, H01L 2978

Patent

active

049140590

ABSTRACT:
Heat flash vapor phase deposition process of an insulating layer on a III-V material substrate and its application to the production of a MIS structure. Using the same enclosure, said process comprises carrying out an ethching of a III-V substrate (2), forming on said substrate at least one protective layer (8,10) for the substrate surface constituting the active zone (6) of the MIS structure, or even producing the active layer by epitaxy, depositing an insulating layer (12) by CVD at high temperature produced by irradiating the surface of the sample (1) with tungsten halogen lamps and optionally forming on the insulating layer (12) a conductive layer (14) at high temperature by irradiation with tungsten halogen lamps, thus completing the MIS structure.

REFERENCES:
patent: 4081313 (1978-03-01), McNeilly et al.
patent: 4371587 (1983-02-01), Peters
patent: 4482393 (1984-11-01), Nishigama et al.
patent: 4532695 (1985-08-01), Schuermeyer
patent: 4698486 (1987-10-01), Sheets
Ghandhi, VLSI Fabrication Principles, New York: John Wiley and Sons, Inc., 1983, pp. 517-520, 214-215.
Japanese Journal of Applied Physics, Aug.-Sep. 1984, pp. 663-666, Kobe, Japan, Hayafuji, et al., "Photo--CVD Dielectric Films on InP".
Revue Phys. Appl. 19, 155-N9 (1984), Carmona, et al., "The Role of Plasma Oxide in InP MIS Structures".
J. Electchem. Soc. 124 (11), 1781-1784, (1977), K. V. Vaidyanathan et al., "Study of Encapsulants for Annealing GaAs".
Appl. Phys. Letters 42(11), Jun. 1983, pp. 950-952, F.H.P.M. Habraken, et al., "Surface and Interface Nitridation . . . ".
Patent Abstracts of Japan 6(67)E 104-105, (SONY), "Forming Method of Insulating Film".
Thin Solid Films 64 (1), 49-55, (1979), Wilmsen, C. W., "Interface Formation of Deposited Insulator Layer on GaAs and InP".
Ruterana et al., "High Resolution Electron Microscopy of the GaAs/Si.sub.3 N.sub.4 Interface Produced by Multipolar Plasma Deposition", Appl. Phys. Lett. 49(11), Sep. 15, 1986, pp. 672-673.
Geib et al., "Influence of Interfacial Structure on the Electronic Properties of SiO.sub.2 /InP MISFET's", J. Vac. Sci. Technol. B2(3), Jul.-Sep. 1984, pp. 516-521.

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