Process for the growth of III-V group compound semiconductor cry

Details Process for the growth of III-V group compound semiconductor cry Process for the growth of III-V group compound semiconductor cry

1988-06-30

1989-06-20

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437108, 437132, H01L 21205

Patent

active

048409219

ABSTRACT:
In a process for the growth of III-V group compound semiconductor crystal on a Si substrate, chloride gas of an element selected from In and Ga of III group elements and hydride gas of an element selected from V group elements are alternately supplied into a growing chamber to grow III-V group compound semiconductor crystal on a Si substrate. As a result, the crystal is of a good selective growth property and of a good crystal property.

REFERENCES:
patent: 3963538 (1976-06-01), Broadie et al.
patent: 3975218 (1976-08-01), Ruehrwein
patent: 4504329 (1985-03-01), Quinlan et al.
patent: 4657603 (1987-04-01), Kruehler et al.
patent: 4808551 (1989-02-01), Mori et al.
Akiyama et al., "Growth of Single Domain GaAs Layer on (100)-Oriented Si Substrate by MOCVD", Japanese Journal of Applied Physics, vol. 23, No. 11, Nov., 1984, pp. L843-L845.
USUI et al., "GaAs Atomic Layer Epitaxy by Hydride VPE", Japanese Journal of Applied Physics, vol. 25, No. 3, Mar., 1986, pp. L212-L214.

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