Process for the formation of an amorphous silicon deposited film

Details Process for the formation of an amorphous silicon deposited film Process for the formation of an amorphous silicon deposited film

1993-10-14

1997-07-01

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 56, 257 58, 257 62, H01L 2120

Patent

active

056441452

ABSTRACT:
A process for forming a silicon-containing amorphous film on a substrate which comprises (a) step of depositing a silicon-containing amorphous film on said substrate and (b) step of irradiating plasma of inert gas to said silicon-containing amorphous film on deposited on the substrate in said step (a), wherein said step (a) and said step (b) are alternately repeated.

REFERENCES:
patent: 5049523 (1991-09-01), Coleman
patent: 5108778 (1992-04-01), Suzuki et al.

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