Process for the formation of a polycrystalline semiconductor fil

Details Process for the formation of a polycrystalline semiconductor fil Process for the formation of a polycrystalline semiconductor fil

1991-12-02

1993-03-09

Hearn, Brian E.

Electrical connectors

Coupling part to receive fluorescent or neon lamp

With additional retaining or locking means for coupled...

437967, 148DIG122, 427571, 427575, 427573, H01L 2100, H01L 2102, H01L 21306

Patent

active

051927179

ABSTRACT:
A process for forming a high quality polycrystalline semiconductor film on an insulating substrate which comprises using a MW-PCVD apparatus comprising a plasma generation chamber provided with a microwave introducing means and a film-forming chamber connected through a grid electrode to said plasma generation chamber, said film-forming chamber containing said insulating substrate positioned on a substrate holder made of a conductive material being installed therein, producing plasma by contacting a film-forming raw material gas with a microwave energy applied through said microwave introducing means in said plasma generation chamber and introducing said plasma into said film-forming chamber while applying a high frequency voltage with a frequency in the range of from 20 to 500 MHz between said grid electrode and said substrate holder to thereby cause the formation of said polycrystalline semiconductor film on said insulating substrate maintained at a desired temperature.

REFERENCES:
patent: 4262035 (1981-04-01), Jaeger et al.
patent: 4579623 (1986-04-01), Suzuki et al.
patent: 4705595 (1987-11-01), Okudaira et al.
patent: 4795529 (1989-01-01), Kawasaki
patent: 4818326 (1989-04-01), Liv et al.
patent: 4898118 (1990-02-01), Murakami et al.

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