Process for the fabrication of epitaxial layers of a compound se

Details Process for the fabrication of epitaxial layers of a compound se Process for the fabrication of epitaxial layers of a compound se

1998-04-14

2000-08-29

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 95, 117 97, 117101, 117952, C30B 2518

Patent

active

061102776

ABSTRACT:
A process for the fabrication on a monocrystal silicon substrate of epitaxial layers of a III-V nitride compound semi-conductor having the structure In.sub.x Al.sub.y Ga.sub.1-x-y N (0.ltoreq.x, 0.ltoreq.y, x+y.ltoreq.1). The process consists of the following steps. A parcel-like structure is created on the surface of a monocrystal silicon substrate. The silicon surface within the parcels is uncovered and the edges of the parcels are covered by a masking material. By means of epitaxial growth of the nitride compound semiconductor exclusively within the parcels on the silicon surface, local islands are created on whose edges the dislocations generated by the lattice mismatches are able to break down. Finally, components are fabricated in and on the parcels.

REFERENCES:
S. Kitamura et al.: "Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates . . . ". In: Jpn. J. Appl. Phys., vol. 34, 1995, pp. 1184-1186.
P. Kung et al.: "High quality AIN and GaN epilayers grown on (00.1) sapphire, (100), and (111) silicon substrates". In: Appl. Phys. Lett, 66 (22), May 1995, pp. 2958-2960.

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