Process for the fabrication of a Schottky gate field-effect tran

Details Process for the fabrication of a Schottky gate field-effect tran Process for the fabrication of a Schottky gate field-effect tran

1987-01-15

1988-06-28

Weisstuch, Aaron

Fishing, trapping, and vermin destroying

437176, 437241, 437912, 148DIG139, 148DIG140, 357 22I, 357 233, 357 22, H01L 21265, H01L 2144

Patent

active

047538996

ABSTRACT:
The invention relates to a process for the fabrication of a field-effect transistor as described in German Patent Application No. P 35 35 002.4, corresponding to U.S. application Ser. No. 06/914,540 comprises first covering a semiconductor member with a layer which forms the channel region and part of which is covered with a passivation layer. Impurities are implanted into the exposed regions of the semiconductor surface and form underneath the channel region highly doped source and drain regions. A surface layer of the passivation layer is then removed in a section adjacent to the source region and a gate electrode is formed on the thus exposed narrow area of the channel region.

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