Metal working – Method of mechanical manufacture – Electrical device making
Patent
1996-05-31
1998-08-18
Vo, Peter
Metal working
Method of mechanical manufacture
Electrical device making
2940207, 2940208, 29834, 228119, 22818022, 228191, H05K 334
Patent
active
057943311
DESCRIPTION:
BRIEF SUMMARY
DESCRIPTION
The present invention relates to a process for exchanging a radiation detection module hybridized by welding bumps. It applies to the fields of microrelectronics and optoelectronics.
The radiation can be infrared, X or Y radiation.
The present invention e.g. makes it possible to repair a microelectronic device constituted by several elementary modules, e.g. infrared radiation detection modules, when the device is no longer operating as a result of one of its modules being defective.
The infrared detection elements, also known as pixels or photosites, of each module are located in a plane known as the detection plane of the microelectronic device. The repair to the latter, involving the exchange of the defective module, must make it possible to have identical detection elements in a very precise spatial position so that they are precisely arranged (in accordance with three orthogonal angles x, y, z) in the same way as the detection elements of the replaced module and still in the detection plane of the device.
These modules are joined end to end and hybridized by welding bumps, using flip-chip technology, to e.g. an interconnection network support or reading circuit.
The invention makes it possible to replace the defective module by a module of the same type, without modifying the initial specifications of the device.
The process according to the invention respects all the electrical specifications, but aims more particularly at respecting the very precise, spatial positioning specifications (in accordance with x, y and z) of the pixels of the module replacing a defective module and which has been hybridized to the support of the interconnection network of the microelectronic device.
Microelectronic devices of the type described hereinbefore are very costly on the one hand because they result from a complex microelectronic techology, the operating frequencies being ever higher, and on the other hand because said devices comprise an ever larger number of elementary modules which it is wished to group in the same system in order to improve the global characteristics thereof. It is also very difficult to produce such microelectronic devices.
Their manufacture can be prejudiced if the means do not exist for exchanging, after assembly and measurements, one or more elementary modules which prove to be defective or not in accordance with the specifications provided by the user.
Consideration will e.g. be given to an infrared detection device diagrammatically shown in FIG. 1. This detection device comprises modules 2 for the detection of an infrared radiation 3, which are joined to one another in order to obtain a "continuous line" of detection pixels or photosites (not shown) with no spacing loss and which are in a very precise, mutual, spatial position.
The materials CMT/CZT (C for cadmium, M for mercury, T for tellerium and Z for zinc), on which said photosites are produced, and the fabrication yield are conditions defining the relatively small size of each of the detection modules 2.
The device diagrammatically shown in FIG. 1 also comprises modules 4 for reading informations supplied by the photosites. These reading modules 4 are produced on silicon and arranged on either side of the detection modules 2. All these modules 2 and 4 are hybridized by not shown, indium bumps on a silicon or sapphire interconnection network support 6.
FIG. 1 also shows input-output connections 8 provided on the interconnection network support 6. The modules 2 and 4 are hybridized to the support 6 by a self-alignment procedure described in French patent application 8905542 of Apr. 26, 1989 (cf. alsoEP-A-395488 and U.S. Pat. No. 5,131,584).
The interconnection network support makes it possible to electrically connect over short distances the individual modules and to produce the input-output interfaces of the device.
FIG. 2A is a diagrammatic, partial view of the face of one of the detection modules 2 on the side of which the photosites are located. FIG. 2A shows certain of the photosites 10 of the module arranged in sta
REFERENCES:
patent: 4991286 (1991-02-01), Russo et al.
patent: 5086558 (1992-02-01), Grube et al.
patent: 5092033 (1992-03-01), Nishiguchi et al.
Johnson et al, Substrate Wiring Patterns for Partial-Good Integegrated-Circuit Chips, IBM Technical Disclosure Bulletin, vol. 25, No. 2, Jul., 1982, pp. 752-753.
Goldman et al, "Lead-Indium For Controlled-Collapse Chip Joining" 27th Electronic Components Conference, Arlington, VA, May 16-18, 1977, pp. 25-29.
Chamonal Jean-Paul
Marion Fran.cedilla.ois
Pornin Jean-Louis
Ravetto Michel
Chang Rick K.
Commissariat a l''Energie Atomique
Vo Peter
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