Process for the epitaxial production of semiconductor stock mate

Details Process for the epitaxial production of semiconductor stock mate Process for the epitaxial production of semiconductor stock mate

1988-09-02

1990-04-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG6, 148DIG57, 148DIG110, 148DIG169, 156611, 437105, 437110, 437133, H01L 2120

Patent

active

049160893

ABSTRACT:
In order, in the epitaxial production of semiconductor products and of articles provided with a layer, to be able to make the junction between the layers applied to the substrates atomically sharp, it is important to be able to change the gas mixture, to be introduced into a pulsed reactor or MBE reactor, rapidly, accurately and without losses in respect of quantity and of composition. To this purpose, each of the gases to be introduced into the reactor is conveyed to a separate gas pipette and thereafter the content of the gas pipette is cyclically passed, by means of a pressure differential, into the pulse reactor, with the composition of the mixture being changed per one or more cycles.

REFERENCES:
patent: 2833151 (1955-05-01), Harvey
patent: 3121062 (1964-02-01), Gould
patent: 3721583 (1973-03-01), Blakeslee
patent: 4190470 (1980-02-01), Walline
patent: 4369031 (1983-01-01), Goldman et al.
patent: 4388342 (1983-06-01), Suzuki et al.
patent: 4411728 (1983-10-01), Sakamoto
patent: 4748135 (1988-05-01), Frijlink
patent: 4801557 (1989-01-01), Wessels et al.
patent: 4829021 (1989-05-01), Fraas et al.
Journal of Crystal Growth, "An Ultra-Fast Gas Delivery System for Producing Abrupt Compositional Switching in OMVPE", by R. S. Sillmon et al., Sep. 1986.
Analytical Chemistry, "Gas-Blending Apparatus", by Donald N. Hanson et al., vol. 31, No. 1, Jan. 1959.
IBM Technical Disclosure Bulletin, "Improved MBE Source Using High Temperature Intermediate Substrate", by J. L. Freeouf et al., vol. 25, No. 2, Jul. 1982.

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