Process for the epitaxial deposition of III-V compounds utilizin

Details Process for the epitaxial deposition of III-V compounds utilizin Process for the epitaxial deposition of III-V compounds utilizin

1983-10-06

1985-03-12

Saba, William G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576E, 148174, 156612, 156613, 156614, 156DIG70, H01L 21205, H01L 21365

Patent

active

045043299

ABSTRACT:
The present invention provides for the deposition of group III-V ternary epitaxial films onto the surfaces of suitable semiconductor substrates. The deposition is accomplished by a vapor phase epitaxy-hydride technique using a group III binary alloy as a group III metal source and phosphine, arsine or stibine as a group V hydride source.

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Kordos et al., Inst. Phys. Conf. Ser. No. 63; Chap 3, Paper presented at Int. Symp. GaAs and Related Compounds, Japan, 1981, p. 131.
Chatterjee et al., J. Crystal Growth, 56, (1982), 591-604.

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