Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having pulling during growth
Patent
1994-08-19
1996-02-20
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Having pulling during growth
117 13, 117 33, 117214, C30B 1504
Patent
active
054920787
ABSTRACT:
In a process and a device for the controlled feeding of a melting crucible (13) with doped particles (2, 2a) during the drawing of a crystal (16) by the Czochralski method by the control of a flow of particles (2, 2a) from a source (1) to the melting crucible (13), the source (1) is equipped with a conveying device (4) for discharging the particles (2, 2a) at adjustable rates per unit time. A crystal (16), formed from the particles, is withdrawn from the melting crucible (13) at a predetermined rate per unit time. So that the control process can be conducted smoothly over prolonged periods of time with precise doping, the particles (2, 2a) are separated into individuals on their way to the melting crucible (13) and counted by at least one sensor (21, 22). The sequence of count pulses is sent to a counter (25) and compared there with a corresponding sequence of reference input pulses. The comparison signal formed from the count pulses and the reference input pulses is used, in accordance with its sign, as a control signal for adjusting the amount of particles being discharged per unit time from source (1) to correspond to the reference value.
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Alterkruger Burkhard
Aufreiter Joachim
Bruss Dieter
Kalkowski Klaus
Breneman R. Bruce
Garrett Felisa
Leybold Aktiengesellschaft
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