Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-06-14
2011-06-14
Pizarro, Marcos D. (Department: 2814)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S424000, C438S431000, C438S439000, C438S975000, C257SE23179, C257S797000
Reexamination Certificate
active
07960244
ABSTRACT:
A process for manufacturing an electronic semiconductor device, wherein a SOI wafer is provided, formed by a bottom layer of semiconductor material, an insulating layer, and a top layer of semiconductor material, stacked on top of one another; alignment marks are formed in the top layer; an implanted buried region is formed, aligned to the alignment marks; a hard mask is formed on top of the top layer so as to align it to the alignment marks; using the hard mask, the top layer is selectively removed so as to form a trench extending up to the insulating layer; there a lateral-insulation region in the trench, that is contiguous to the insulating layer and delimits with the latter an insulated well of semiconductor material; and electronic components are formed in the top layer.
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Leonardi Salvatore
Modica Roberto
Graybeal Jackson LLP
Jablonski Kevin D.
Jorgenson Lisa K.
Montalvo Eva Yan
Pizarro Marcos D.
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