Process for testing a semiconductor device

Details Process for testing a semiconductor device Process for testing a semiconductor device

1995-11-30

1999-02-02

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324754, G01R 3102

Patent

active

058670327

ABSTRACT:
Large diameter probe tips (42) can be used to probe a semiconductor device (60). The probe tips (42) are oriented more perpendicular to the surface of the semiconductor device (60) and are less likely to cause damage to the semiconductor device (60). The probe tips (42) can be used with a semiconductor device (60) having elongated electrodes (64) such that a small pitch for the electrodes can be used. Small diameter probe tips (102) can also be used and have a reduced likelihood of contacting a passivation layer (36) during probing.

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patent: 4523144 (1985-06-01), Okubo et al.
patent: 4563640 (1986-01-01), Hasegawa
patent: 4780670 (1988-10-01), Cherry
patent: 4998062 (1991-03-01), Ikeda
patent: 5126662 (1992-06-01), Jinbo
Zimmermann, "SiProbe--A New Technology for Wafer Probing", IEEE, International Test Conference Paper 4.3, pp. 106-112 (1995) (unavailable month).
"Intel A80502-120 Pentium Processor;" Integrated Circuit Engineering Corp.; p. 12, Figs. 5,6,6a, and 7 (Jun. 1995).

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