Process for stripping outer edge of BESOI wafers

Details Process for stripping outer edge of BESOI wafers Process for stripping outer edge of BESOI wafers

1994-11-30

1997-09-16

Niebling, John

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

148DIG12, 148DIG135, 148DIG161, 438977, H01L 2120, H01L 21461

Patent

active

056680457

ABSTRACT:
A process for stripping the outer edge of a bonded BESOI wafer. The bonded BESOI wafer comprises a handle wafer, an oxide layer on one surface of the handle wafer, a device layer bonded to the oxide layer, and a p.sup.+ etch-stop layer on the device layer having an exposed face. The process comprises masking the exposed face of the p.sup.+ etch-stop layer, and abrading the periphery of the BESOI wafer to remove edge margins of the p.sup.+ etch-stop layer and device layer.

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