Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2006-06-06
2006-06-06
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C435S091500, C435S091500, C216S011000, C216S048000
Reexamination Certificate
active
07056812
ABSTRACT:
A semiconductor wafer having a high degree of thinness and exhibiting an enhanced strength state. A layer of tenacious reinforcement material is disposed over a back side of the wafer while in a rough state from backgrinding without prior, conventional polishing or plasma etching of the back side. The thin layer or film of reinforcement material fills grooves, fractures and scratches in the back side of the wafer, enhance the rigidity of the wafer and provide a planar, smooth, back side surface layer. The reinforcement material counteracts internal stresses of the wafer tending to warp, crack and propagate lattice defects in the wafer. The reinforcement material may also be configured to act as a die attach adhesive, may provide an ionic barrier, and may remain as part of the packaging for semiconductor dice singulated from the wafer.
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Wolf et al., “Silicon Processing for the VLSI Era,” vol. 1: Process Technology, Lattice Press, 1986, pp. 238-239.
Derderian James M.
Draney Nathan R.
Le Dung A.
TraskBritt
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