Process for stabilizing spent silicon contact mass

Organic compounds -- part of the class 532-570 series – Organic compounds – Silicon containing

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502 38, 502 41, C07F 716

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active

053211499

ABSTRACT:
A method is provided for passivating spent silicon contact mass by heating the spent silicon contact mass at a temperature in the range of from 200.degree. C. to 800.degree. C. in an oxygen containing atmosphere.

REFERENCES:
patent: 4758352 (1988-07-01), Feldner et al.
patent: 4960523 (1990-10-01), Degen et al.
patent: 5000934 (1991-03-01), Marko et al.
patent: 5239102 (1993-08-01), Webb et al.
The Chemistry of Silicon, E. G. Rochow, Chapter 15 of Comprehensive Inorganic Chemistry, Pergamon Press, Metallic Silicides and Silicon Alloys. p. 1361.

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