Process for sintering cubic system silicon carbide powder

Details Process for sintering cubic system silicon carbide powder Process for sintering cubic system silicon carbide powder

1984-02-24

1986-04-01

Derrington, James

Plastic and nonmetallic article shaping or treating: processes

Including step of generating heat by friction

264 63, 264 66, 501 88, 501 90, C04B 3556

Patent

active

045797048

ABSTRACT:
A process for sintering cubic system silicon carbide powder, which comprises compacting a mixture of cubic system silicon carbide powder with more than 1% by weight and not more than 3% by weight of carbon and at least 0.10% by weight and less than 0.3% by weight of boron and sintering the compact thereby obtained, under vacuum or in a chemically inert atmosphere at a temperature of from 1,900.degree. to 2,200.degree. C.

REFERENCES:
patent: 4041117 (1977-08-01), Prochazka
patent: 4124667 (1978-09-01), Coppola
patent: 4135937 (1979-01-01), Murata
patent: 4237085 (1980-12-01), Smoak
patent: 4318876 (1982-03-01), Broussand
patent: 4336216 (1982-06-01), Watanabe
patent: 4372902 (1983-02-01), Denton
patent: 4374793 (1983-02-01), Koga
"The Role of Boron and Carbon in the Sintering of Silicon Carbide", Special Ceramics 6, British Ceramic Research Association (1975) by S. Prochazka.

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