Process for simultaneous development and etch of photoresist and

Gas separation: apparatus – Electric field separation apparatus – Electrode cleaner – apparatus part flusher – discharger – or...

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

96 362, 96 48R, 156 8, 156 13, 156 15, G03C 500

Patent

active

039444210

ABSTRACT:
Photoresists are developed and the supporting substrate is etched simultaneously therewith by bringing the resist (after exposure) into physical contact with a fluid containing a developer for the resist and an etchant for the supporting substrate.

REFERENCES:
patent: 3019106 (1962-01-01), Adams
patent: 3399994 (1968-09-01), Watkinson
patent: 3639185 (1972-02-01), Colom
patent: 3698904 (1972-10-01), Fukui et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for simultaneous development and etch of photoresist and does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for simultaneous development and etch of photoresist and, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for simultaneous development and etch of photoresist and will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-290748

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.