Process for silicon and trichlorosilane production

Chemistry of inorganic compounds – Silicon or compound thereof – Halogen containing

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423350, C01B 3302, C01B 3308

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041170946

ABSTRACT:
An improved method is provided for converting metallurgical grade silicon to semiconductor grade silicon, by first reacting the impure silicon with silicon tetrahalide to form a mixture of halosilanes, separating and purifying the trihalosilane, and then depositing semiconductor grade silicon by reacting the trihalosilane. The tetrahalide produced as a by-product of the deposition step is recycled to react with additional impure silicon. Improved trihalosilane yields from reacting silicon with the tetrahalide are achieved by adding hydrogen as a reactant, and by immediate quenching of the effluent with HCl. Such improved yields permit the complete system to be internally balanced so that the net production of by-products can be reduced to zero.

REFERENCES:
patent: 2595620 (1952-05-01), Wagner et al.
patent: 3565590 (1971-02-01), Bracken
patent: 3824121 (1974-07-01), Bradley et al.
patent: 3933985 (1976-01-01), Rodgers

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