Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2005-10-11
2005-10-11
Sarkar, Asok Kumar (Department: 2891)
Semiconductor device manufacturing: process
Electron emitter manufacture
C445S050000
Reexamination Certificate
active
06953701
ABSTRACT:
A method of sharpening a tapered or pointed silicon structure, such as a silicon field emitter. The method includes oxidizing the silicon field emitter to form an oxide layer thereon and removing the oxide layer. Oxidizing occurs at a low temperature and forms a relatively thin (e.g., about 20 Å to about 40 Å) oxide layer on the silicon field emitter. The oxide layer may be removed by etching. The method may be employed to sharpen existing silicon structures or in fabricating tapered or pointed silicon structures. A silicon field emitter that has been sharpened or fabricated in accordance with the method is substantially free of crystalline defects and includes an emitter tip having a diameter as small as about 40 Å to about 20 Å or less.
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