Process for separating disk-shaped substrates with the use...

Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S118000, C438S311000, C257SE21014, C257SE21114, C257SE21205, C257SE21212, C257SE21320, C257SE21499

Reexamination Certificate

active

08043890

ABSTRACT:
The present invention relates to a device and a method for dividing up substrates (2) in wafer form (e.g. wafers), which is used in the semiconductor industry, MST (microstructure technology) industry and photovoltaic industry, whereby improved reliability of the process and lower reject rates are accomplished. This object is achieved according to the invention by using adhesion forces that act between the substrates in wafer form and the devices (1) thereby used.

REFERENCES:
patent: 5575868 (1996-11-01), Mann
patent: 6478069 (2002-11-01), Fujisaku et al.
patent: 6821376 (2004-11-01), Rayssac et al.
patent: 7520954 (2009-04-01), Kratzer et al.
patent: 195 81 457 (1999-04-01), None
patent: 199 50 068 (2001-04-01), None
patent: 103 59 732 (2005-07-01), None
patent: 55 096267 (1980-07-01), None
patent: 61 125767 (1986-06-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Process for separating disk-shaped substrates with the use... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for separating disk-shaped substrates with the use..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for separating disk-shaped substrates with the use... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4256576

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.