Process for semiconductor apparatus including forming an...

Details Process for semiconductor apparatus including forming an... Process for semiconductor apparatus including forming an...

2005-03-01

2005-03-01

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S716000, C438S748000, C438S753000

Reexamination Certificate

active

06861359

ABSTRACT:
In order to prevent dusting from a peripheral end portion of a wafer, a semiconductor film formed is removed from at least the entire surface of the backside of the wafer and from the peripheral portion of the wafer by etching at a high etching rate relative to an insulating film present beneath the semiconductor film, to realize a semiconductor apparatus in which the semiconductor film is formed in an integrated circuit pattern region on the face side of the wafer.Thus, the problem of dusting from the peripheral portion of the wafer is obviated, and a semiconductor apparatus with high reliability is realized.

REFERENCES:
patent: 5426073 (1995-06-01), Imaoka et al.
patent: 6562692 (2003-05-01), Oi
patent: Hei 5-21742 (1993-01-01), None
patent: Hei-11-88590 (1999-07-01), None
Werner Kern, “Handbook of Semiconductor Wafer Cleaning Technology, ” Science Technology and Applications, 1993, Werner Kern, pp 516-517.

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