Process for selectively depositing a refractory metal silicide o

Details Process for selectively depositing a refractory metal silicide o Process for selectively depositing a refractory metal silicide o

1996-12-23

1999-03-02

Beck, Shrive

Coating processes

Coating by vapor, gas, or smoke

Base includes an inorganic compound containing silicon or...

4272552, 4272553, 4272554, 4272557, 438677, 438683, C23C 1642

Patent

active

058767967

ABSTRACT:
Process for selectively depositing a refractory metal silicide on a surface of a monocrystalline or polycrystalline silicon wafer, comprising: a step of preparing said surface, consisting in forming a silicon oxide or silicon oxynitride layer having a thickness e.ltoreq.1 nm on this surface; and, on the silicon oxide or oxynitride layer formed, a step of selective vapor deposition of a refractory metal silicide.

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patent: 5294571 (1994-03-01), Fujishiro et al.
patent: 5500249 (1996-03-01), Telford et al.
patent: 5516730 (1996-05-01), Saeed et al.
Formation of self-aligned TiSi.sub.2 contacts to Si at low temperatures . . . 6046 Materials Letters 17(1993) Oct., No. 6, Amersterdam, NL.

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