Process for selectively depositing a refractory metal layer on a

Details Process for selectively depositing a refractory metal layer on a Process for selectively depositing a refractory metal layer on a

1983-10-11

1986-02-18

Lawrence, Evan K.

Chemistry: electrical and wave energy

Processes and products

204 385, 204 40, 427113, 427259, 427265, C25D 502, C25D 510, B05D 132, B05D 512

Patent

active

045712867

ABSTRACT:
A process for selectively depositing a tungsten or tantalum refractory metal on a graphite piece, particularly for X-ray tube anodes, wherein the graphite piece is masked on selected surfaces, an intermediate layer of a coating material is deposited on unmasked surfaces to promote adhesion of the refractory metal followed by removal of the masking and deposition of the refractory metal on all surfaces, and finally removing from the formerly masked surfaces refractory metal poorly adhered thereto.

REFERENCES:
patent: 4424271 (1984-01-01), Keel et al.
IBM Technical Disclosure Bulletin, vol. 11, No. 11, Apr., 1969, New York (U.S.).
F. J. Landler et al.: "Eliminating Undercutting on Thick Metal Film and Manufacturing Thin Metal Masks", pp. 1607-1608.

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