Process for selective recess etching of epitaxial field effect t

Details Process for selective recess etching of epitaxial field effect t Process for selective recess etching of epitaxial field effect t

1998-07-23

2000-05-09

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438751, H01L 2100

Patent

active

060604026

ABSTRACT:
A process for selective recess etching of GaAs field-effect transistors. A selected etch stop layer (In.sub.x Ga.sub.1-x P) maintains what is commonly referred to as lattice-match with the GaAs substrate material. By using this etch stop, a significant reduction in access resistances is realized with respect to devices containing other etch stop materials while an improvement in the uniformity of device characteristics across the wafer and from wafer to wafer is realized.

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