Process for selective formation of III-IV group compound film

Details Process for selective formation of III-IV group compound film Process for selective formation of III-IV group compound film

1993-10-29

1995-06-20

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 90, 117106, 117934, 437 89, 437 90, 437108, C30B 2504

Patent

active

054258081

ABSTRACT:
A process for selective formation of a III-V group compound film comprises applying a compound film forming treatment, in a gas phase including a starting material for supplying the group III atoms of Periodic Table and a starting material for supplying the group V atoms of Periodic Table, on a substrate having a non-nucleation surface (S.sub.NDS) with small nucleation density and a nucleation surface (S.sub.NDL) with a larger nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of said non-nucleation surface (S.sub.NDS) and a large area sufficient for a number of nuclei to be formed, and forming selectively a III-V group compound film only on said nucleation surface (S.sub.NDL).

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