Process for selective deposition of polysilicon over single crys

Details Process for selective deposition of polysilicon over single crys Process for selective deposition of polysilicon over single crys

1995-01-18

1997-07-08

Niebling, John

Fishing, trapping, and vermin destroying

437967, 437191, 437186, H01L 2138

Patent

active

056460732

ABSTRACT:
A method, and resulting product, are disclosed for selectively forming polycrystalline silicon over exposed portions of a single crystal silicon substrate. The method includes inhibiting the formation of such polycrystalline silicon over adjacent silicon oxide surfaces; and the resulting product of such a process. The polycrystalline silicon is selectively deposited over the single crystal silicon substrate by first forming a thin layer of a lattice mismatched material over the single crystal silicon surface, and then depositing a layer of polycrystalline silicon over the lattice mismatched material. Preferably, the thin lattice mismatched layer comprises a silicon/germanium (SiGe) alloy.

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M. Kato, et al. "Nucleation Control of Silicon-Germanium on Silicon Oxide for Selective Epitaxy and Polysilicon Formation" Extended Abstracts of the 22nd Conf. on Solid State Devices and Materials (Aug. 1990) pp. 329-332.
A. R. Powell, et al. "Si-Ge-C Alloys Extending Si Based Heterostructure Engineering" Japanese J. Applied Phys. V.33 No. 4B PtI (Apr. 1994) pp. 2388-2390.

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