Process for screening outgas emissions in semiconductor...

Details Process for screening outgas emissions in semiconductor... Process for screening outgas emissions in semiconductor...

2005-03-31

2008-08-19

Chen, Bret (Department: 1792)

Measuring and testing

Gas analysis

With compensation detail

C073S023220, C422S088000, C422S089000, C427S008000, C427S248100

Reexamination Certificate

active

07412872

ABSTRACT:
The present description relates to a process for measuring outgas emissions in fabrication chambers used for semiconductors, micromachines and the like. In one embodiment, the invention includes inserting a gas adsorption material into a processing chamber exhaust vent, running a process in the chamber, venting gasses in the chamber through the gas adsorption material, removing the adsorption material from the exhaust vent, and analyzing the adsorption material for gases.

REFERENCES:
patent: 4308233 (1981-12-01), Narumiya et al.
patent: 6042797 (2000-03-01), Ogawa et al.
patent: 6206971 (2001-03-01), Umotoy et al.
patent: 6397582 (2002-06-01), Hanaoka et al.
patent: 6756336 (2004-06-01), Kasahara et al.
patent: 7181903 (2007-02-01), Yamato et al.
patent: 7207669 (2007-04-01), Pavlin
patent: 2002/0148352 (2002-10-01), Hirose et al.

Affiliated with

Also associated with

Rating

Process for screening outgas emissions in semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for screening outgas emissions in semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for screening outgas emissions in semiconductor... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3993289