Fishing – trapping – and vermin destroying
Patent
1994-12-28
1996-06-18
Thomas, Tom
Fishing, trapping, and vermin destroying
437 10, 437 12, 437 13, 437937, H01L 21306
Patent
active
055277187
ABSTRACT:
A process for producing a semiconductor device which includes a step of drawing out the impurities contained in the electrode film and/or insulating film and contributing to the growth of the insulating film before the heat treatment for activating the electrode film. The step of drawing out the impurities is a step of preliminary heat treatment at a temperature at least the film-forming temperature of the electrode film and no more than the growth temperature of the insulating film. The preliminary heat treatment is preferably performed at a temperature of 450.degree. C. to 800.degree. C., more preferably 450.degree. C. to 700.degree. C. The preliminary heat treatment may be performed after the formation of the electrode film or may be performed during the formation of the electrode film after each formation of one or more thin film layers for forming the electrode film.
REFERENCES:
patent: 3923559 (1975-12-01), Sinha
patent: 4561171 (1985-12-01), Schlosser
patent: 5273920 (1993-12-01), Kwasnick et al.
patent: 5364803 (1994-11-01), Lur et al.
patent: 5393686 (1995-02-01), Yeh et al.
H. Komatsu, et al., "Restraint of W--Polycide Gate Capacitance Decrease," Journal of the Japanese Society of Applied Physics, Fall 1988, p. 616.
Seita Hisaharu
Tajima Kazuhiro
Gurley Lynne A.
Sony Corporation
Thomas Tom
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