Process for removing contaminant from a surface and composition

Details Process for removing contaminant from a surface and composition Process for removing contaminant from a surface and composition

1999-05-26

2000-11-14

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

134 3, 134 41, 216 38, 216 88, 252 793, 252 794, 438754, H01L 2100

Patent

active

061470023

ABSTRACT:
Particulate and metal ion contamination is removed from a surface, such as a semiconductor wafer containing copper damascene or dual damascene features, employing aqueous composition comprising a fluoride containing compound; a dicarboxylic acid and/or salt thereof; and a hydroxycarboxylic acid and/or salt thereof.

REFERENCES:
patent: 5824601 (1998-10-01), Dao et al.
patent: 5885476 (1999-03-01), Hong et al.
patent: 5893756 (1999-04-01), Berman et al.
patent: 6044851 (2000-04-01), Grieger et al.

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