Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2007-06-26
2007-06-26
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S706000, C257SE21007, C257SE21218
Reexamination Certificate
active
10890360
ABSTRACT:
A process for forming an organic electronic device includes the steps of: (a) forming a first conductive member and a conductive lead over a substrate, wherein the first conductive member and conductive lead are spaced apart from each other; (b) forming an organic layer over the substrate, the first conductive member, and the conductive lead; (c) forming a patterned conductive layer over the organic layer, wherein the patterned conductive layer includes a second conductive member, and the patterned conductive layer creates an exposed portion of the organic layer and an unexposed portion of the organic layer; and (d) dry etching at least the exposed portion of the organic layer to expose a portion of the conductive lead using at least one oxygen-containing gas, wherein dry etching is performed at a pressure in a range of approximately 0.01 to 7.5 mTorr.
REFERENCES:
patent: 5550066 (1996-08-01), Tang et al.
patent: 6060728 (2000-05-01), Ghosh et al.
patent: 6106352 (2000-08-01), Fujii
patent: 6153254 (2000-11-01), Young et al.
patent: 6265319 (2001-07-01), Jang
patent: 6358631 (2002-03-01), Forrest et al.
patent: 6475836 (2002-11-01), Suzawa et al.
patent: 6541790 (2003-04-01), Pichler
patent: 6566156 (2003-05-01), Sturm et al.
patent: 6664564 (2003-12-01), Peng
patent: 6881598 (2005-04-01), Pichler
patent: 2002/0055210 (2002-05-01), Peng
patent: 2002/0072139 (2002-06-01), Kashiwabara
patent: 2003/0030061 (2003-02-01), Peng
patent: 2003/0064324 (2003-04-01), Wei et al.
patent: 2003/0094607 (2003-05-01), Ewald et al.
patent: 2003/0224547 (2003-12-01), Lee et al.
Stanley Wolf and Richard N. Tauber, Silicon Processing For The VLSI Era, 1986, Lattice Press, vol. I, pp. 568-569 and 581-582.
JP632287789, Patent Abstract, Semiconductor laser and LED and fabrication thereof, Sep. 22, 1988, Matushita Electric Industrial Co., Ltd, Japan.
KR2000073038, Patent Abstract, Method of making an organic electroluminescent display involving spin coating of an organic insulating material on electrode, Dec. 5, 2001, LG Electronics, Inc., S. Korea.
KR2002000204, Patent Abstract, Method for cleaning electroluminescent display using laser and remote plasma, Jan. 5, 2002, Choi, S. R.
KR2002016127, Patent Abstract, Method for manufacturing organic electroluminescent device, Mar. 4, 2002, Samsung SDI Co, Ltd.
Sze, S. M. (Editor), 9.2.4 Sputter Deposition, VLSI Technology, 358, 1983, McGraw-Hill Book Company.
Wolf, Stanley and Tauber, Richard N., Silicon Processing for the VLSI ERA, vol. 1: Process Technology, 546, 1986, Lattice Press.
Patent Abstracts of Japan, vol. 2003, No. 05, May 12, 2003 & JP 2003 017251 A, Canon Electronics Inc., Jan. 17, 2003, Abstract.
International Search Report Dated: May 31, 2005, International Appln. No. PCT/US2004/023671, International Filing Date: Jul. 22, 2004, 7 pages.
Written Opinion of the International Searching Authority Dated: May 31, 2005, International Appln. No. PCT/US2004/023671, International Filing Date: Jul. 22, 2004, 7 pages.
Li Feng
Lopez Gutierrez Linnette Amarilys
Prakash Shiva
E. I. du Pont de Nemours and Company
Isaac Stanetta
Lamming John H.
Lebentritt Michael
LandOfFree
Process for removing an organic layer during fabrication of... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Process for removing an organic layer during fabrication of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for removing an organic layer during fabrication of... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3864103