Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching
Patent
1998-01-27
2000-10-17
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Liquid phase etching
438754, 216 87, 216100, H01L 21302
Patent
active
061331589
ABSTRACT:
The present invention provides a method for removing contaminant metals from a solvent used in the manufacture of a semiconductor wafer. The method may comprise the steps of bringing a solvent having contaminant metals therein into contact with a sacrificial body having titanium oxide associated therewith and cleaning the semiconductor wafer with the solvent. The titanium oxide reacts with the contaminant metals to substantially remove them from the solvent to provide a substantially cleaner solvent for the production of metal oxide semiconductor (MOS)devices. The present invention is particularly applicable in "back-end" processes of such devices.
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Silicon Processing for the VLSI Era, vol. 2, S. Wolfe Chapter 3: Contact Technology . . . pp. 121-128; 130-134.
Obeng Yaw S.
Opila Robert L.
Raghavan Ramaswamy S.
Chen Kin-Chan
Lucent Technologies - Inc.
Utech Benjamin L.
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