Process for removing a residue from a metal structure on a...

Details Process for removing a residue from a metal structure on a... Process for removing a residue from a metal structure on a...

2004-11-22

2008-08-19

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S714000, C134S001100, C134S001200

Reexamination Certificate

active

07413993

ABSTRACT:
The invention is concerned with a process for removing residue comprising a polymeric resist and metal oxide from a metal structure on a semiconductor substrate, the process comprising the steps of: (a) heating up the substrate with the metal structure in the presence of molecular nitrogen gas (N2); (b) a stabilization step in the presence of pure molecular nitrogen gas (N2); (c) a passivation step employing a plasma containing at least one of the group of water, nitrogen and oxygen; and (d) a stripping step containing oxygen to remove the residue, comprising resist.

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