Process for reducing transient diffusion of dopant atoms

Details Process for reducing transient diffusion of dopant atoms Process for reducing transient diffusion of dopant atoms

1995-08-07

1997-09-23

Dang, Trung

Fishing, trapping, and vermin destroying

437 20, 437 16, 437939, 437950, 148DIG144, H01L 21265

Patent

active

056703910

ABSTRACT:
Transient enhanced diffusion (TED) of dopants is reduced by bring the surface closer to the implant damage prior to the annealing process.

REFERENCES:
Hopkins et. al.,; "Enhanced Diffusion in Boron Implanted Silicon"; J. Electrochemical Society: Accelerated Brief Communication; Aug. 1985; pp. 2035-2036.
Michel; "Rapid Annealing and the Anomalous diffusion of ion Implanted Boron into Silicon"; Appl. Phys. Leter. vol. 50, No. 7, Feb. 1987; pp. 416-418.
Fair; "Modeling Rapid Thermal Diffusion of Arsenic and Boron in Silicon" J. Electrochem. Soc: Solid-State Science and Tech; vol. 131, No. 10; Oct. 1984; pp. 2387-2394.
Huang et al; "Enhanced Tail Diffusion of Ion Implanted Boron in Silicon" Appl. phys. Letters; vol. 50(24), Jun. 1987, pp. 1745-1747.
Fan et al.; "Reduction of transient-enhanced diffusion of boron in silicon by implantation through oxide"; Appl. phys. Lett. 54(7); Feb. 1985; pp. 603-605.
Huang et al. "Reverse Annealing and Low-temperature Diffusion of Boron in Boron-implanted Silicon"; J. App. Phys 63(11); Jun. 1988; pp. 5521-5525.

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