Process for reducing the surface recombination speed in silicon

Details Process for reducing the surface recombination speed in silicon Process for reducing the surface recombination speed in silicon

1995-09-12

1999-10-26

Nguyen, Tuan H.

Semiconductor device manufacturing: process

With measuring or testing

438 17, 438781, 438974, 427 10, H01L 2102

Patent

active

059727241

ABSTRACT:
The reduction of surface recombination is required for the manufacture of electronic devices made of silicon as well as for the application of various measurements and analytical methods for determining the purity of silicon. According to this invention, a process will be described for applying a laquer layer to the surface of silicon wafers, wherby the surface recombination velocity will be reduced to a value below 100 cm/s.

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