Process for reducing the oxygen incorporation into a single crys

Details Process for reducing the oxygen incorporation into a single crys Process for reducing the oxygen incorporation into a single crys

1994-02-28

1995-12-26

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117920, C30B 1520

Patent

active

054778085

ABSTRACT:
A process and an apparatus reduces the oxygen incorporation into a single crystal of silicon which is drawn by the Czochralski method. If a molding is immersed at least temporarily in the melt between the single crystal and the crucible wall during drawing of the single crystal, the oxygen content of the single crystal is reduced compared with the oxygen content of a single crystal which has been drawn without the use of the molding.

REFERENCES:
patent: 4497777 (1985-05-01), Kojima
patent: 4545849 (1985-10-01), d'Aragona
patent: 4944834 (1990-07-01), Tada et al.
patent: 5131974 (1992-07-01), Oda et al.
patent: 5270020 (1993-12-01), Suzuki et al.
"Silicon Processing For The VLSI Era; Wolf et al., vol. I: Process Technoy; Chapter 2" Crystalline Defects, Thermal Processing and Gettering; (1986); pp. 66-70.
Semiconductor International; Butler; "Controlling Oxygen In Silicon: Key to Higher VLSI Circuit Yields".

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