Process for reducing circuit damage during PECVD in single wafer

Details Process for reducing circuit damage during PECVD in single wafer Process for reducing circuit damage during PECVD in single wafer

1995-12-19

1999-07-20

Bowers, Charles

Semiconductor device manufacturing: process

Including control responsive to sensed condition

Electrical characteristic sensed

427 10, 438786, H01L 21306

Patent

active

059266899

ABSTRACT:
In a PECVD process, the plasma potential is controlled and maintained at a uniform level to confine the formed plasma to the gap area between the electrodes away from the influence of the walls of the discharge chamber. The plasma potential is controlled by operating the system at a high pressure, above about 12 Torr, and monitoring the operation by observing the DC bias on the upper or driven electrode until a positive potential, preferably greater than about 10V, is developed. At this point a symmetrical glow discharge and a controlled plasma exists between the driven electrode and the susceptor electrode, controllable by maintaining the pressure between about 14 and 20 Torr, to reduce plasma damage to the semiconductor body being coated which maximizes yield.

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