Process for reclaiming semiconductor wafers and reclaimed...

Details Process for reclaiming semiconductor wafers and reclaimed... Process for reclaiming semiconductor wafers and reclaimed...

2006-03-07

2006-03-07

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S694000, C438S691000

Reexamination Certificate

active

07008874

ABSTRACT:
The present invention is directed to a process for reclaiming for reuse a single crystal silicon wafer removed from an aborted semiconductor device fabrication process. The process includes (a) subjecting the wafer to an oxide growth step to form an oxide layer having a thickness greater than 2 nanometers, (b) thinning the wafer by removing material from substantially the entire front surface to provide a thinned wafer having a thinned precipitate free zone, and (c) polishing the front surface of the thinned wafer to a specular finish.

REFERENCES:
patent: 2002/0086539 (2002-07-01), Falster

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