Process for realizing trench structures

Details Process for realizing trench structures Process for realizing trench structures

1996-04-01

1999-12-14

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having air-gap dielectric

438432, 438431, H01L 21762

Patent

active

060017058

ABSTRACT:
A process for forming, on a semiconductor substrate, an isolation structure between two zones of an integrated circuit wherein active regions of electronic components integrated thereto have already been defined, comprises the steps of:
defining an isolation region on a layer of silicon oxide overlying a silicon layer;
selectively etching the silicon to provide the isolation region;
growing thermal oxide over the interior surfaces of the isolation structure;
depositing dielectric conformingly; and
oxidizing the deposited dielectric.

REFERENCES:
patent: 4264382 (1981-04-01), Anantha et al.
patent: 5324683 (1994-06-01), Fitch et al.
patent: 5432376 (1995-07-01), Zambrano
Goto, H. and K. Inayoshi, "Trench Isolation Schemes for Bipolar Devices: Benefits and Limiting Aspects," Proceedings of the 17.sup.th ESSDERC(Bologna, Sept. 1987), pp. 369-372.
Rapisarda, C.,R. Zambrano, F. Baroetto and P.J. Ward, "Reliable Deep Trench Isolation Scheme for High Density, High Performance Bipolar Applications," Isolation and Trench Technology Symposium (Seattle, Oct. 1990), Proceedings of the 178.sup.th Electromechanical Society Meeting, pp. 412-413.
Robb, F.Y. et al., "High Voltage Deep Trench Isolation Process Options," Isolation and Trench Technology Symposium (Seattle, Oct. 1990), Proceedings of the 178.sup.th Electromechanical Society Meeting , pp. 408-409.
Wolf, S., Silicon Processing for the VLSI Era: vol. 2, Process Intergration, Lattrie Press, 1990, pp. 51-58.

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