Process for rapping of electrostatic precipitator surfaces

Details Process for rapping of electrostatic precipitator surfaces Process for rapping of electrostatic precipitator surfaces

1990-03-21

1991-05-14

Nozick, Bernard

Gas separation

Means within gas stream for conducting concentrate to collector

55112, B03C 300

Patent

active

050152670

ABSTRACT:
A method for removing precipitate from a collecting surface of an electrostatic precipitator by rapping a point on the surface. Mechanical energy is applied a plurality of times with a rapper wherein the level of mechanical energy increases from one application of energy to another. Thus preciptate is removed from regions of the collecting surface progressively more distant from the energy application point. The time period between applications is selected to cause removal of precipitate from a region of the surface to be coincident with falling precipitate from regions above. The level of mechanical energy is controlled by applying to the rapper a sequence of full half-cycles of electrical energy followed by a single phase conduction cycle. The applied current is sensed and the duration of current application is adjusted to provide a predetermined energy level to the rapper. The polarity of the current is reversed to prevent magnetization of the rapper.

REFERENCES:
patent: 3487606 (1970-01-01), Bridges et al.
patent: 3504480 (1970-04-01), Copcutt et al.
patent: 4086646 (1978-04-01), Lanese
patent: 4111669 (1978-09-01), League
patent: 4285024 (1981-08-01), Andrews
patent: 4928456 (1990-05-01), Del Gatto

Affiliated with

Also associated with

Rating

Process for rapping of electrostatic precipitator surfaces does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for rapping of electrostatic precipitator surfaces, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for rapping of electrostatic precipitator surfaces will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1645416