Process for radiation hardening of MOS devices and device produc

Details Process for radiation hardening of MOS devices and device produc Process for radiation hardening of MOS devices and device produc

1970-09-14

1976-12-21

Larkins, William D.

29571, 357 29, 357 52, 357 54, H01L 2978

Patent

active

039992098

ABSTRACT:
An MOS device and a method for making such device where an insulating layer over the gate region is formed at critical temperatures results in hardening the device against high energy particle and electromagnetic radiation effects. A layer of chromium on top of the gate insulating layer is used to enhance the hardening, and diffusion of a portion of the chromium layer into the insulating layer maintains a high degree of control over ionization damage.

REFERENCES:
patent: 3547717 (1970-12-01), Lindmayer
Lindmayer et al., IEEE Trans. Electron Devices, vol. ED15, No. 9 pp. 637-640 (Sept. 1968), "Radiation Resistant MOS Devices".
Snow et al., "Effects of Ionizing Radiation . . .", Proc. IEEE, vol. 55, No. 7, July 1967, pp. 1168 and 1172 relied upon.

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