Process for purifying silicon

Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon

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C01B 3302

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active

042410371

ABSTRACT:
A process is disclosed for purifying silicon wherein silicon in the molten state is reacted with barium carbonate and/or oxide and/or hydroxide and then, after cooling and crushing, leached with one or more dilute inorganic acids. Preferably an oxidizing gas such as oxygen or water vapor is blown into the molten mass during the reaction, which is conducted at a temperature in the range of from 1550.degree. to 2000.degree. C. The inorganic acid may be for example hydrochloric acid, hydrofluoric acid, nitric acid, sulphuric acid, or mixtures thereof.

REFERENCES:
patent: 1037713 (1912-09-01), Allen
patent: 2866701 (1958-12-01), Strauss
patent: 2885364 (1959-05-01), Swartz
patent: 3012865 (1961-12-01), Pellin
patent: 3148131 (1964-09-01), Coursier
patent: 3442622 (1969-05-01), Monnier et al.
patent: 4092446 (1978-05-01), Padovani et al.
patent: 4102764 (1978-07-01), Harvey et al.
patent: 4124410 (1978-11-01), Kotval et al.

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