Process for purifying nitrogen trifluoride gas

Chemistry of inorganic compounds – Nitrogen or compound thereof – Binary compound

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423240, B01D 5334

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active

049801449

ABSTRACT:
This invention relates to a process for obtaining a high purity nitrogen trifluoride gas which is used as a dry etching agent for semiconductors or a cleaning gas for CVD apparatus, etc., particularly to a process for removing oxygen difluoride. This is a process for purifying a nitrogen trifluoride gas by, after removing hydrogen fluoride from a nitrogen trifluoride crude gas, contacting with at least one aqueous solution containing one selected from the group consisting of sodium thiosulfate, hydrogen iodide and sodium sulfide.

REFERENCES:
patent: 4156598 (1979-05-01), Woytek et al.
patent: 4193976 (1980-03-01), Lileck et al.

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