Process for purification of solid silicon

Chemistry of inorganic compounds – Silicon or compound thereof – Elemental silicon

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C01B 3302

Patent

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046121790

ABSTRACT:
A process is disclosed for producing silicon having a purity 99.999% or better which comprises contacting solid silicon at a temperature slightly below the melting point of silicon with a molten purifying agent which does not appreciably react with silicon to cause the impurities in the silicon to enter the molten material. After cooling, the purified silicon is separated from the purifying agent and the impurities therein by leaching.

REFERENCES:
patent: 1386227 (1921-08-01), Becket
patent: 3148131 (1964-09-01), Coursier
patent: 3933981 (1976-01-01), Wakefield

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