Fishing – trapping – and vermin destroying
Patent
1995-12-01
1998-01-06
Niebling, John
Fishing, trapping, and vermin destroying
437184, 437203, 437944, 430314, 15665911, H01L 21465
Patent
active
057054320
ABSTRACT:
A unique photoresist process is provided which achieves clean and complete lift-off of a thin film layer such as a sputtered thin film formed on a photoresist which is formed above a semiconductor substrate. The process of the present invention relies on a reentrant photoresist profile which breaks the continuity of the thin film layer. Accordingly, the process of the present invention ensures a clean lift-off. The desired photoresist profile which breaks the continuity of the thin film layer can be obtained by a typical photoresist process preceded by an oxidation process that takes place on the surface of the semiconductor substrate. The oxidation process provides a thin native oxide layer with thickness ranging from about 30 to 50 .ANG.. No extra processing steps involving dielectric film deposition and etch are required to achieve clean lift-off. Nevertheless, the process of the present invention ensures the clean lift-off of the thin film layer. Accordingly, the process of the present invention provides good visual and electrical yields.
REFERENCES:
patent: 4614564 (1986-09-01), Sheldon et al.
patent: 4902379 (1990-02-01), Rhodes
R. Williams, "Modern GaAs Processing Methods", Artech House, 1990, pp. 278-279.
Chi Tom Y.
Chung Sam
Hou Liping D.
Lee Kusol
Li Danny
Bilodeau Thomas G.
Denson-Low W. K.
Hughes Aircraft Company
Lachman M. E.
Niebling John
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